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Identificação

Identificação pessoal

Nome completo
Faye Djibril Ndiack

Nomes de citação

  • Djibril Nd, Faye

Identificadores de autor

Ciência ID
5D1F-BCD4-FFCE
ORCID iD
0000-0002-8313-8755
Formação
Grau Classificação
2014/04 - 2019/01/25
Concluído
 Engenharia de Materiais (Doutoramento)
Universidade de Lisboa Instituto Superior Técnico, Portugal
"Ion Implantation in AlxGa1-xN alloys Thin Films and GaN Nanostructures." (TESE/DISSERTAÇÃO)
 Pass with distinctions
2009/12/31
Concluído
 Master Degree in Condensed Matter Physics (Master)
Université Cheikh Anta Diop Faculté des Sciences et Techniques, Senegal
"Etudes des Propriétés Structurales et Magnétiques des Couches Minces d’Alliage de Siliciure de Fer-Cobalt Fe1-xCoxSi obtenues par ablation laser." (TESE/DISSERTAÇÃO)
 Good
2007/07
Concluído
 Licence Physics (Licence)
Université Cheikh Anta Diop Faculté des Sciences et Techniques, Senegal
2006/10
Concluído
 Diplôme Universitaire d’Etude Scientifique (DUES 2) Physics and chemistry (Diplôme d´études supérieures)
Université Cheikh Anta Diop Faculté des Sciences et Techniques, Senegal
2005/07
Concluído
 Diplôme Universitaire d’Etude Scientifique (DUES 1) Physics and chemistry (Diplôme d´études supérieures)
Université Cheikh Anta Diop Faculté des Sciences et Techniques, Senegal
Percurso profissional

Ciência

Categoria Profissional
Instituição de acolhimento 		Empregador
2022/01/10 - Atual Investigador (Investigação) Associação Laboratório Colaborativo em Transformação Digital, Portugal
Associação Laboratório Colaborativo em Transformação Digital, Portugal
2020/06/01 - Atual Investigador (Investigação) INESC Microsistemas e Nanotecnologias, Portugal
2019/06/01 - 2020/05/31 Pós-doutorado (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2018/03/01 - 2019/05/31 Investigador (Investigação) Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
2013/11/01 - 2016/10/31 Investigador (Investigação) Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
Projetos

Bolsa

Designação Financiadores
2019/06/01 - Atual Plasmonic nanoparticles for bio-detection-Nano4bio
POCI-01-0145-FEDER-032299
Bolseiro de Pós-Doutoramento
Fundação para a Ciência e a Tecnologia
Em curso
2018/03/01 - 2019/04/30 COFRE - Photonic crystal-assisted frequency conversion phosphor layers for energy applications
PTDC/CTM-ENE/1087/2014, FCT/MCTES (PIDDAC
Outra
Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal
Concluído

Projeto

Designação Financiadores
2020/01/01 - Atual Smart tubular sensing and actuation devices for lab-on-chip platforms
PTDC/NAN-MAT/31688/2017
Bolseiro de Investigação
2012/04/01 - Atual High quality material and intrinsic properties of InN and indium rich Nitride alloys
PITN-GA-2008-213238
Bolseiro de Cientista Convidado
École Nationale Supérieure d'Ingénieurs de Caen, França
 EU Framework Programme for Research and Innovation Marie Sklodowska-Curie Actions
Concluído
2013/11/01 - 2016/10/31 Exploring novel materials systems
N°31716
Bolseiro de Doutoramento
EU Framework Programme for Research and Innovation Marie Sklodowska-Curie Actions
Produções

Publicações

Artigo em revista
  1. Marcin Stachowicz; J.M. Sajkowski; M.A. Pietrzyk; D.Nd. Faye; S. Magalhaes; E. Alves; A. Reszka; A. Pieniazek; A. Kozanecki. "Investigation of interdiffusion in thin films of ZnO/ZnCdO grown by molecular beam epitaxy". Thin Solid Films 781 (2023): 140003-140003. http://dx.doi.org/10.1016/j.tsf.2023.140003.
    10.1016/j.tsf.2023.140003
  2. Nathalia Hammes; Catarina Ribeiro; Catarina Machado; João Ferreira; Ricardo Campos; Djibril Faye; Ana Cortez; et al. "Materials screening and characterization for functional printed automotive interiors parts". Flexible and Printed Electronics 8 2 (2023): 025022-025022. http://dx.doi.org/10.1088/2058-8585/acdfe0.
    10.1088/2058-8585/acdfe0
  3. Przemyslaw Adam Józwik; José Cardoso; Diogo F. Carvalho; M. Rosario P. Correia; Miguel Sequeira; Sergio Magalhães; Djibril Ndiack FAYE; et al. "Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation". Physical Chemistry Chemical Physics (2022): https://doi.org/10.1039%2Fd2cp02526d.
    10.1039/d2cp02526d
  4. Djibril Nd, Faye. "Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters". Applied Materials Today 22 (2021): 100893-100893. http://dx.doi.org/10.1016/j.apmt.2020.100893.
    10.1016/j.apmt.2020.100893
  5. João Salgado Cabaço; D. Nd. Faye; Joao Pedro Araujo; Eduardo Alves; Sérgio Magalhães. "Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN". Journal of Physics D: Applied Physics (2021): https://doi.org/10.1088%2F1361-6463%2Fabee44.
    10.1088/1361-6463/abee44
  6. S. Magalhães; J. S. Cabaço; R. Mateus; D. Nd. Faye; D. R. Pereira; M. Peres; K. Lorenz; et al. "Crystal mosaicity determined by a novel layer deconvolution Williamson–Hall method". CrystEngComm 23 10 (2021): 2048-2062. https://doi.org/10.1039%2Fd0ce01669a.
    10.1039/d0ce01669a
  7. Ndiack, Faye. "Structural and optical studies of aluminosilicate films doped with (Tb3+, Er3+)/Yb3+ by ion implantation". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (2019): http://dx.doi.org/10.1016/j.nimb.2019.08.027.
    10.1016/j.nimb.2019.08.027
  8. Djibril Nd Faye; Xavier Biquard; Emilio Nogales; Miguel Felizardo; Marco Peres; Andrés Redondo-Cubero; Thomas Auzelle; et al. "Incorporation of Europium Into GaN Nanowires by Ion Implantation". The Journal of Physical Chemistry C (2019): https://doi.org/10.1021%2Facs.jpcc.8b12014.
    10.1021/acs.jpcc.8b12014
  9. J. Cardoso; N. Ben Sedrine; A. Alves; M. A. Martins; M. Belloeil; B. Daudin; D. Nd. Faye; et al. "Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications". Applied Physics Letters 113 20 (2018): 201905-201905. https://doi.org/10.1063%2F1.5048772.
    10.1063/1.5048772
  10. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; A. J. Neves; E. Alves; M. Bockowski; V. Hoffmann; et al. "Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites". ACS Applied Nano Materials 1 8 (2018): 3845-3858. https://doi.org/10.1021%2Facsanm.8b00612.
    10.1021/acsanm.8b00612
  11. D. Nd. Faye; M. Döbeli; E. Wendler; F. Brunner; M. Weyers; S. Magalhães; E. Alves; K. Lorenz. "Crystal damage analysis of implanted AlxGa1-xN (0¿=¿x¿=¿1) by ion beam techniques". Surface and Coatings Technology 355 (2018): 55-60. https://doi.org/10.1016%2Fj.surfcoat.2018.01.020.
    10.1016/j.surfcoat.2018.01.020
  12. N. Ben Sedrine; J. Rodrigues; J. Cardoso; D.Nd. Faye; M. Fialho; S. Magalhães; A.F. Martins; et al. "Optical investigations of europium ion implanted in nitride-based diode structures". Surface and Coatings Technology 355 (2018): 40-44. https://doi.org/10.1016%2Fj.surfcoat.2018.02.004.
    10.1016/j.surfcoat.2018.02.004
  13. D. Nd. Faye; M. Fialho; S. Magalhães; E. Alves; N. Ben Sedrine; J. Rodrigues; M.R. Correia; et al. "Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 379 (2016): 251-254. https://doi.org/10.1016%2Fj.nimb.2016.03.028.
    10.1016/j.nimb.2016.03.028
  14. D. Nd. Faye; E. Wendler; M. Felizardo; S. Magalhães; E. Alves; F. Brunner; M. Weyers; K. Lorenz. "Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds". The Journal of Physical Chemistry C 120 13 (2016): 7277-7283. https://doi.org/10.1021%2Facs.jpcc.6b00133.
    10.1021/acs.jpcc.6b00133
  15. A Dioum; S Ndiaye; EHO Guéye; MB Gaye; DN Faye; O Sakho; M Faye; AC Beye. "3-D modelling of a bilayer heterojunction organic solar cell based on copper phthalocyanine and fullerene (CUPC/C60): Evidence of total excitons dissociation at the donor-acceptor interface". Global Journal of Pure and Applied Sciences 19 1 (2013): https://doi.org/10.4314%2Fgjpas.v19i1.6.
    10.4314/gjpas.v19i1.6