Katharina Lorenz (E910-E432-2AB6)

Curriculum Vitae

Katharina Lorenz

Katharina Lorenz (PhD in Physics 2002, University of Bonn, Germany) is Coordinating Researcher at Instituto Superior Tecnico (IST), University of Lisbon and since 2023 she is the President of the Department of Nuclear Sciences and Engineering. She is Director of the Laboratory of Accelerators and Radiation Technologies (Responsible for the Laboratory of Accelerators) of IST. She leads the group of Wide Bandgap Semiconductors of INESC Microsystems and Nanotechnologies (INESC MN). She teaches at the Physics Department of IST and is collaborator of the Institute for Plasmas and Fusion (IPFN) of IST. Published 245 journal articles and 3 book chapters. Organized 13 conferences or workshops. Delivered 60 invited talks at scientific events. Supervised or co-supervised 6 PhD theses and 15 MSc dissertations. Has received 4 awards and/or honors. Participates and/or participated as Principal Investigator in 17 projects and as Researcher in 18 projects. Works in the areas of Exact Sciences / Physical Sciences with emphasis on wide bandgap semiconductors and devices, nanotechnology, ion beam analysis and ion beam modification as well as radiation effects in materials and devices. She has been member of the Board of the European Nuclear Education Network (since 2023), member of the Executive Committee of the European Physical Society (since 2023), member of the Directive Board of the Portuguese Physical Society (SPF) as treasurer (2019-2022), member of the coordination committee of the Nuclear Physics section (since 2017) and she is Mentor of the EPS Young Minds Section Lisbon. She is Editor of the Elsevier journal Nuclear Instruments and Methods in Physics research, Section B: Beam Interactions with materials and Atoms (since 2024).

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Identification

Personal identification

Full name: Katharina Lorenz

Citation names

Lorenz, Katharina
K. Lorenz

Author identifiers

Ciência ID: E910-E432-2AB6
ORCID iD: 0000-0001-5546-6922
Researcher Id: F-3513-2010

Knowledge fields

Exact Sciences - Physical Sciences

Languages

Language	Speaking	Reading	Writing	Listening
German (Mother tongue)
English	Advanced (C1)	Advanced (C1)	Advanced (C1)	Advanced (C1)
French	Intermediate (B1)	Intermediate (B1)	Intermediate (B1)	Intermediate (B1)
Portuguese	Advanced (C1)	Advanced (C1)	Advanced (C1)	Advanced (C1)
Russian	Beginner (A1)	Beginner (A1)	Beginner (A1)	Beginner (A1)

Education

	Degree	Classification
2020 Concluded	Engenharia Física Tecnológica (Título de Agregado) Universidade de Lisboa Instituto Superior Técnico, Portugal
2002 Concluded	Physics (Doutoramento) Rheinische Friedrich-Wilhelms-Universität Bonn, Germany "Implantationsstudien an Gruppe-III-Nitriden (Implantation Studies in Group-III-Nitrides)" (THESIS/DISSERTATION)	Very Good
1998 Concluded	Physics (Mestrado) Rheinische Friedrich-Wilhelms-Universität Bonn, Germany "Untersuchungen zur Joddiffusion in GaAs (Investigation of the Diffusion of Iodine in GaAs)" (THESIS/DISSERTATION)	Very Good

Affiliation

Science

	Category Host institution	Employer
2021/10/01 - Current	Coordinating Researcher (Research)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2018/09/01 - 2021/09/30	Principal Investigator (Research)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2015/07/01 - 2018/08/31	Auxiliary Researcher (Research)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2013/09/01 - 2015/06/30	Contracted Researcher (Research)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2008/03/01 - 2013/02/28	Contracted Researcher (Research)	Instituto Tecnológico e Nuclear, Portugal

2002/10/01 - 2008/02/28	Postdoc (Research)	Instituto Tecnológico e Nuclear, Portugal

Teaching in Higher Education

	Category Host institution	Employer
2013/03/01 - Current	Lecturer (University Teacher)	Instituto Superior Técnico Departamento de Física, Portugal
	Instituto Superior Técnico Departamento de Física, Portugal
2014/01/01 - 2017/12/31	Visiting Professor (University Teacher)	University of Strathclyde, United Kingdom

Positions / Appointments

	Category Host institution	Employer
2023/01/04 - Current	Organic Unit President	Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal
	Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal
2022/01/01 - Current	Director of the Laboratory of Accelerators and Radiation Technologies (Responsible for the Laboratory of Accelerators) of Campus Tecnológico e Nuclear IST	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal

2023/01/04 - 2024/12/31	Organic Unit President	Universidade de Lisboa Instituto Superior Técnico, Portugal
	Universidade de Lisboa Departamento de Engenharia e Ciências Nucleares, Portugal

Others

	Category Host institution	Employer
2019/01/01 - Current	Member of INESC Microsistemas e Nanotecnologias	Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Portugal

2018/01/01 - Current	Collaborator of the Institute for Plasmas and Fusion (IPFN), IST, University of Lisbon, Portugal	Universidade de Lisboa Instituto Superior Técnico, Portugal

2013/01/01 - 2018/12/31	Member of the Institute for Plasmas and Fusion (IPFN), IST, University of Lisbon, Portugal	Universidade de Lisboa Instituto Superior Técnico, Portugal

2002/01/01 - 2012/12/31	Member of the Centre for Nuclear Physics of the University of Lisbon (CFNUL), Portugal	Universidade de Lisboa, Portugal

1999/02/01 - 2002/07/31	PhD Student	Rheinische Friedrich-Wilhelms-Universität Bonn, Germany

1998/07/01 - 1998/12/30	Diploma Student	Rheinische Friedrich-Wilhelms-Universität Bonn, Germany

1998/01/02 - 1998/06/30	ERASMUS student	Université Claude Bernard Lyon 1 Faculté des Sciences et Technologies, France

Projects

Grant

	Designation	Funders
2024/03/01 - 2028/02/29	Research Infrastructure Access in Nanoscience & Nanotechnology (RIANA) Horizon Europe grant agreement nº 101130652 Co-Principal Investigator (Co-PI)
2022 - 2026	RECYCLABLE MATERIALS DEVELOPMENT at ANALYTICAL RESEARCH INFRASTRUCTURES 101058414 Co-Principal Investigator (Co-PI)	EU Framework Programme for Research and Innovation Secure Societies
2023/01/02 - 2025/12/31	Ion beam processing of Ga2O3 2022.05329.PTDC Principal investigator	Fundação para a Ciência e a Tecnologia Ongoing
2022/01 - 2024/04	FUll colour Nitride Nanowire light emitting diodes (FUNN-LED) 2021.09198.CBM Principal investigator
2021/02/01 - 2024/01/31	Defect Engineered 2D Oxide Field Effect Transistors for efficient biosensing PTDC/CTM-CTM/3553/2020 Principal investigator INESC Microsistemas e Nanotecnologias, Portugal Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal	Fundação para a Ciência e a Tecnologia Ongoing
2021/01/01 - 2022/12/31	Material’s Research with Radioactive Isotopes and Nuclear Techniques at ISOLDE-CERN CERN/FIS-TEC/0003/2019 Researcher Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Centro de Ciências e Tecnologias Nucleares, Portugal Universidade de Aveiro, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade do Porto Faculdade de Ciências, Portugal	Fundação para a Ciência e a Tecnologia Ongoing
2019 - 2022	Research And Development with Ion Beams – Advancing Technology in Europe 824096 Researcher	EU Framework Programme for Research and Innovation Science with and for Society Ongoing
2020/06/01 - 2021/11/30	Nano-engineering of wide bandgap Semiconductors using Ion Beams (NASIB) LISBOA-01-0145-FEDER-028011 Principal investigator Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal INESC Microsistemas e Nanotecnologias, Portugal	Fundação para a Ciência e a Tecnologia Ongoing
2018/06 - 2021/06	NAno-engineering of wide bandgap Semiconductors using Ion Beams PTDC/CTM-CTM/28011/2017 Principal investigator	Fundação para a Ciência e a Tecnologia Ongoing
2018/07/01 - 2020/12/31	PORTUGAL AT ISOLDE : Materials and Nuclear Physics Research with Radioactive Isotopes and Techniques CERN/FIS-PAR/0005/2017 Researcher	Fundação para a Ciência e a Tecnologia
2015 - 2018	Ion beam modification of advanced wide bandgap semiconductor hetero- and nanostructures IST Start-Up Funds Principal investigator Universidade de Lisboa Instituto Superior Técnico, Portugal	Universidade de Lisboa Instituto Superior Técnico Concluded
2013/05 - 2015/10	Functionalising wide bandgap semiconductor nanowires using ion beams: Novel materials for nano-light emitters and nano-sensors Provided by PTCRIS: 127772 Principal investigator	Fundação para a Ciência e a Tecnologia
2013/05 - 2015/09	Bandgap engineering of III-nitride quantum wells for efficient green light emitting diodes Provided by PTCRIS: 125747 Principal investigator	Fundação para a Ciência e a Tecnologia
2013/01/01 - 2014/12/31	Doping studies of GaN nanowires FCT PESSOA Principal investigator	Fundação para a Ciência e a Tecnologia Concluded
2012/06 - 2014/12	Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE - applied materials research with nuclear techniques, training and development. Provided by PTCRIS: 123585 Researcher	Fundação para a Ciência e a Tecnologia
2010/02 - 2013/07	Free-charge carrier properties and doping mechanisms of InN-based materials Provided by PTCRIS: 100448 Researcher	Fundação para a Ciência e a Tecnologia
2010/04 - 2013/03	Ion beam modification and neutron irradiation studies of wide bandgap semiconductor hetero- and nanostructures Provided by PTCRIS: 100756 Principal investigator	Fundação para a Ciência e a Tecnologia
2011/02 - 2012/05	Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE - applied materials research with nuclear techniques, training and development. Provided by PTCRIS: 116320 Researcher	Fundação para a Ciência e a Tecnologia
2011 - 2012	Ion beam modification of novel III-nitride hetero- and nano-structures FCT/DAAD Principal investigator	Fundação para a Ciência e a Tecnologia
2010/01 - 2010/12	Perturbed Angular Correlations and Electron Channeling Solid State Physics Experiments at ISOLDE Provided by PTCRIS: 109272 Researcher	Fundação para a Ciência e a Tecnologia
2007/07 - 2010/12	Ternary and quaternary nitride alloys for lattice matched heterostructures: Novel materials for high efficiency field effect transistors and optoelectronic devices Provided by PTCRIS: 65233 Principal investigator	Fundação para a Ciência e a Tecnologia
2007/01 - 2009/02	Optical doping of AlN and GaN/AlN nanostructures by ion implantation Provided by PTCRIS: 82382 Principal investigator	Fundação para a Ciência e a Tecnologia
2008 - 2009	Rare Earth doped GaN quantum dots for efficient light emitters FCT PESSOA Principal investigator	Fundação para a Ciência e a Tecnologia
2007/11 - 2008/10	Perturbed Angular Correlations and Electron Channeling Solid State Physics Experiments at ISOLDE Provided by PTCRIS: 81921 Researcher	Fundação para a Ciência e a Tecnologia
2005/09 - 2007/12	Perturbed Angular Correlations experiments at the Portuguese Research Reactor Provided by PTCRIS: 58498 Researcher	Fundação para a Ciência e a Tecnologia
2005/07 - 2007/07	Optical doping of AlN and GaN/AlN nanostructures by ion implantation Provided by PTCRIS: 57550 Principal investigator	Fundação para a Ciência e a Tecnologia
2005 - 2007	Doping of GaN-based nanostructures by ion-implantation FCT/DAAD Principal investigator	Fundação para a Ciência e a Tecnologia

Contract

	Designation	Funders
2021/01/01 - 2025/12/31	Instituto de Plasmas e Fusão Nuclear LA/P/0061/2020 10.54499/LA/P/0061/2020 UID/FIS/50010/2019 Universidade da Madeira, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal Instituto de Plasmas e Fusão Nuclear, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal	Fundação para a Ciência e a Tecnologia Ongoing
2021/01/01 - 2025/12/31	Institute for Health and Bioeconomy LA/P/0140/2020 10.54499/LA/P/0140/2020 Universidade de Lisboa Instituto de Bioengenharia e Biociências, Portugal Universidade Nova de Lisboa, Portugal Rede de Química e Tecnologia Laboratório Associado para a Química Verde, Portugal Unidade de Ciências Biomoleculares Aplicadas, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal INESC Microsistemas e Nanotecnologias, Portugal Universidade Nova de Lisboa Associação para a Inovação e Desenvolvimento da FCT, Portugal	Fundação para a Ciência e a Tecnologia Ongoing
2023/01/01 - 2024/12/31	Investigação em Materiais com Isótopos e Técnicas Nucleares Radioativas no ISOLDE-CERN 2021 CERN/FIS-TEC/0003/2021 10.54499/CERN/FIS-TEC/0003/2021 Universidade de Aveiro CICECO, Portugal Universidade do Porto Faculdade de Ciências, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal Universidade de Trás-os-Montes e Alto Douro Centro de Química Vila Real, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Centro de Ciências e Tecnologias Nucleares, Portugal Universidade do Porto Instituto de Física dos Materiais-Instituto de Nanociência e Nanotecnologia, Portugal	Fundação para a Ciência e a Tecnologia Ongoing
2019/01/01 - 2023/12/31	Applied Molecular Biosciences Unit UIDP/04378/2020 10.54499/UIDP/04378/2020 UIDB/04378/2020 10.54499/UIDB/04378/2020 Universidade de Lisboa Instituto de Bioengenharia e Biociências, Portugal Universidade do Porto, Portugal Universidade Nova de Lisboa, Portugal Rede de Química e Tecnologia Laboratório Associado para a Química Verde, Portugal Unidade de Ciências Biomoleculares Aplicadas, Portugal Universidade do Porto Instituto de Ciências Tecnologias e Agroambiente, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal INESC Microsistemas e Nanotecnologias, Portugal Universidade Nova de Lisboa Associação para a Inovação e Desenvolvimento da FCT, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2015/10/10 - 2017/12/31	Material´s Characterization with Nuclear Radioactive Techniques - synergy and complementarity applied to training and development. (old project: Perturbed Angular Correlations and Electron Channeling Experiments at ISOLDE-CERN) CERN/FIS-NUC/0004/2015 Provided by PTCRIS: 142410 Universidade de Aveiro CICECO, Portugal Universidade do Porto Faculdade de Ciências, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal FCiênciasID Associação para a Investigação e Desenvolvimento de Ciências, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Centro de Ciências e Tecnologias Nucleares, Portugal Universidade do Porto Instituto de Física dos Materiais-Instituto de Nanociência e Nanotecnologia, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2013/05/01 - 2015/10/31	Funcionalização de nanofios baseados em semicondutores de largo hiato energético utilizando feixes de iões: Materiais inovadores para nano-emissores de luz e nanosensores PTDC/CTM-NAN/2156/2012 Principal investigator Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2013/05/04 - 2015/09/03	Tuning the energy gap of quantum wells based on III-N semiconductors for efficient green light-emitting diodes PTDC/FIS-NAN/0973/2012 Principal investigator Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2012/06/01 - 2014/12/31	Experiências de Correlações Angulares Perturbadas e de Canalização de Electrões no ISOLDE-CERN - investigação aplicada a materiais com técnicas nucleares, formação e desenvolvimento. CERN/FP/123585/2011 Universidade do Porto Faculdade de Ciências, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal Associação do Instituto Superior Técnico para a Investigação e Desenvolvimento, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2011/01/01 - 2013/12/31	Projecto Estratégico - UI 275 - 2011-2012 PEst-OE/FIS/UI0275/2011 Universidade de Lisboa Instituto Superior Técnico, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Lisboa Faculdade de Ciências, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2010/02/01 - 2013/07/31	Properties of free charge carriers and doping mechanisms in InN-based materials PTDC/FIS/100448/2008 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal Universidade Nova de Lisboa Faculdade de Ciências e Tecnologia, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2010/04/01 - 2013/03/31	Modification studies of nano- and heterostructures of high gap semiconductors by ion implantation and neutron irradiation PTDC/CTM/100756/2008 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2011/02/01 - 2012/05/31	Experiences of Disturbed Angular Correlations and Electron Channeling at ISOLDE-CERN - research applied to materials with nuclear techniques, training and development CERN/FP/116320/2010 Universidade do Porto Faculdade de Ciências, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal Universidade de Trás-os-Montes e Alto Douro, Portugal Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2010/01/01 - 2010/12/31	Experiências de Correlações Angulares Perturbadas e de Canalização de Electrões no ISOLDE-CERN CERN/FP/109272/2009 Universidade de Lisboa Instituto Superior Técnico, Portugal Fundação da Faculdade de Ciências da Universidade de Lisboa, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2007/07/01 - 2010/12/31	Ternary and quaternary nitride alloys for heterostructures with compatibility in network parameters: new materials for field effect transistors and high efficiency optoelectronic devices PTDC/FIS/65233/2006 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2007/05/01 - 2010/10/31	Implantação de nanocamadas magneticas de semicondutores de hiato largo para aplicações à spintrónica PTDC/FIS/66262/2006 Universidade de Aveiro, Portugal Universidade de Lisboa Instituto Superior Técnico, Portugal Universidade do Porto Faculdade de Ciências, Portugal	Fundação para a Ciência e a Tecnologia Concluded
2007/11/01 - 2008/10/31	Experiences of Disturbed Angular Correlations and Electron Channeling at ISOLDE-CERN POCI/FP/81921/2007 PDCT/FP/63911/2005	Fundação para a Ciência e a Tecnologia Concluded
2005/09/01 - 2007/12/31	Experiências de Correlações Angulares Perturbadas no Reactor Português de Investigação POCI/FIS/58498/2004	Fundação para a Ciência e a Tecnologia Concluded
2005/07/04 - 2007/07/31	Dopagem óptica de AlN e nano-estruturas de GaN/AlN por implantação iónica POCI/FIS/57550/2004 Universidade de Aveiro, Portugal	Fundação para a Ciência e a Tecnologia Concluded

Other

	Designation	Funders
2009 - 2015	The role of In in III-nitride ternary semiconductors ISOLDE/CERN Principal investigator	Concluded

Outputs

Publications

Book chapter	Jozwik, Przemyslaw; Nowicki, Lech; Ratajczak, Renata; Mieszczynski, Cyprian; Stonert, Anna; Turos, Andrzej; Lorenz, Katharina; Alves, Eduardo. "Advanced Monte Carlo Simulations for Ion-Channeling Studies of Complex Defects in Crystals". In Theory and Simulation in Physics for Materials Applications, 133-160. Springer International Publishing, 2020. 10.1007/978-3-030-37790-8_8 Lorenz, Katharina. "Implantation damage formation in GaN and ZnO” Chapter in “Ion Implantation". In Ion Implantation. INTECH, 2012. Lorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.. "RE implantation and annealing of III-nitrides". 2010. 10.1007/978-90-481-2877-8_2
Conference paper	Verheij, Dirkjan; Peres, Marco; Cardoso, Susana; Alves, Luís Cerqueira; Alves, Eduardo; Durand, Cristophe; Eymery, Joël; Fernandes, Jorge; Lorenz, Katharina. "Ion beam induced current analysis in GaN microwires". 2019. 10.1051/epjconf/202023305001 Lorenz, K.; Redondo-Cubero, A.; Lourenço, M. B.; Sequeira, M. C.; Peres, M.; Freitas, A.; Alves, L. C.; et al. "Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells, Proc. of SPIE Vol. 9748 (2016) 97480L". 2016. 10.1117/12.2211429 Yamaga, M.; Watanabe, H.; Kurahashi, M.; O'Donnell, K. P.; Lorenz, K.; Bockowski, M.; IOP. "Indirect excitation of Eu3+ in GaN codoped with Mg and Eu, Journal of Physics: Conference Series 619 (2015) 012025". 2015. 10.1088/1742-6596/619/1/012025 O'Donnell, K. P.; Edwards, P. R.; Kappers, M. J.; Lorenz, K.; Alves, E.; Bockowski, M.. "Europium-doped GaN(Mg): beyond the limits of the light-emitting diode, Phys. Status Solidi C 11 (2014) 662–665". 2014. 10.1002/pssc.201300519 Kachkanov, Vyacheslav; Dolbnya, Igor; O'Donnell, Kevin; Lorenz, Katharina; Pereira, Sergio; Watson, Ian; Sadler, Thomas; et al. "Characterisation of III-nitride materials by synchrotron X-ray microdiffraction reciprocal space mapping, Phys. Status Solidi C 10 (2012) 481–485". 2013. 10.1002/pssc.201200596 O'Donnell, K.P.; Martin, R.W.; Edwards, P.R.; Lorenz, K.; Alves, E.; Bockowski, M.. "Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN, AIP Conference Proceedings 1566, (2013) 63-64". 2013. 10.1063/1.4848286 Nogales, E.; Lopez, I.; Mendez, B.; Piqueras, J.; Lorenz, K.; Alves, E.; Garcia, J. A.. "Doped gallium oxide nanowires for photonics, Proc. of SPIE Vol. 8263 (2012) 82630B". 2012. 10.1117/12.907766 Kachkanov, V.; Dolbnya, I.P.; O'Donnell, K.P.; Lorenz, K.; Pereira, S.; Martin, R.W.; Edwards, P.R.; Watson, I.M.. "Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping, Phys. Status Solidi C 10 (2012) 481–485". 2012. 10.1557/opl.2012.216 Lacroix, B.; Leclerc, S.; Ruterana, P.; Declémy, A.; Miranda, S.M.C.; Lorenz, K.; Alves, E.. "Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation". 2012. 10.1557/opl.2011.995 Kachkanov, V.; O'Donnell, K.P.; Rice, C.; Wolverson, D.; Martin, R.W.; Lorenz, K.; Alves, E.; Bockowski, M.. "Zeeman splittings of the ⁵D 0- ⁷F 2 transitions of Eu ³⁺ ions implanted into GaN, Mater. Res. Soc. Symp. Proc. Vol. 1290 (2011)". 2011. 10.1557/opl.2011.241 Bola, AM; Correia, MR; Pereira, S; Gonzalez, JC; Lorenz, K; Alves, E; Barradas, N; Briot, O. "Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers, Phys. Status Solidi C 7 (2010) 56–59". 2010. 10.1002/pssc.200982632 Lorenz, K; Alves, E; Magalhães, S; Peres, M; Monteiro, T; Kozanecki, A; Valerio, M E G. "Defect studies and optical activation of Yb doped GaN, Journal of Physics: Conference Series 249 (2010) 012053". 2010. 10.1088/1742-6596/249/1/012053 Yakovlev, EV; Lobanova, AV; Talalaev, RA; Watson, IM; Lorenz, K; Alves, E; Palacios, T; Jena, D. "Mechanisms of AlInN growth by MOVPE: modeling and experimental study, Phys. Status Solidi C, 5 (2008) 1688-1690". 2007. 10.1002/pssc.200778588 Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; et al. "Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence, Phys. Status Solidi C 3 (2006) 1927-1930". 2006. 10.1002/pssc.200565411 Lorenz, K; Nogales, E; Nedelec, R; Penner, J; Vianden, R; Alves, E; Martin, RW; et al. "Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN, MRS Symp. Proc. 892 (2005) FF23.15". 2006. Roqan, I.S.; Trager-Cowan, C.; Hourahine, B.; Lorenz, K.; Nogales, E.; O'Donnell, K.P.; Martin, R.W.; et al. "Characterization of the blue emission of Tm/Er co-implanted GaN, MRS Symp. Proc. 892 (2005) FF23.13". 2006. Nogales, E.; Lorenz, K.; Wang, K.; Roqan, I.S.; Martin, R.W.; O'Donnell, K.P.; Alves, E.; Ruffenach, S.; Briot, O.. "A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN, MRS Symp. Proc. 892 (2005) FF24.3". 2006. Wojtowicz, T; Ruterana, P; Lorenz, K; Wahl, U; Alves, E; Ruffenach, S; Halambalakis, G; et al. "The atomic structure of defects formed during doping of GaN with rare earth ions, Phys. Status Solidi C 2 (2005) 1081-1084". 2005. 10.1002/pssc.200460625 Lorenz, K.; Wahl, U.; Alves, E.; Wojtowicz, T.; Ruterana, P.; Dalmasso, S.; Martin, R.W.; et al. "Processing of rare earth doped GaN with ion beams, MRS Symp. Proc. 798 (2003) 453-458". 2003. Lorenz, K.; Wahl, U.; Alves, E.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.. "High temperature implantation of Tm in GaN, MRS Symp. Proc. 798 (2004) 447-452". 2003. Dalmasso, S.; Martin, R.W.; Edwards, P.R.; Katchkanov, V.; O'Donnell, K.P.; Lorenz, K.; Alves, E.; et al. "Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN, MRS Symp. Proc. 798 (2004) Y 5.2". 2003. Lorenz, K; Wahl, U; Alves, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Ng, HM; et al. "High temperature implantation of Tm in GaN". Paper presented in MRS Fall Meeting, 2003. masso (a2) ... DOI: https://doi.org/10.1557/PROC-798-Y5.4 Lorenz, K.; Vianden, R.. "Defect recovery in AlN and InN after heavy ion implantation, Phys. Status Solidi C1 (2002) 413-416". 2002. 10.1002/pssc.200390076 Lorenz, K; Vianden, R; Hoffmann, A; Rizzi, A. "Defect recovery in AIN and InN after heavy ion implantation". 2002. https://doi.org/10.1002/pssc.200390076
Conference poster	Magalhães Esteves, Duarte ; Cardoso Pedro, Miguel; Pereira, Daniela R.; Magalhães, Sérgio; Rodrigues, Ana Luísa; Cerqueira, Luís; Luís F. Santos ; et al. Corresponding author: Magalhães Esteves, Duarte. "Ion-implanted ß-Ga2O3: from nanomembrane fabrication to photonic applications". Paper presented in Local Photonics Meetup 2023, 2023. Magalhães Esteves, Duarte ; Pedro, M. C.; Pereira, Daniela R.; Magalhães, Sérgio; Alves, LC; Luís F. Santos ; Lorenz, Katharina; Peres, Marco. Corresponding author: Magalhães Esteves, Duarte. "A novel approach for ß-Ga2O3 nanomembrane fabrication using ion implantation". Paper presented in 21st International Conference of Radiation Effects in Insulators, 2023. Antunes, André M.; Hussain, Mukhtar; Alves, Joana; Vaz, Gonçalo; Pires, Hugo; Peres, Marco; Lorenz, Katharina; et al. "Shining light on solids: a TDDFT study of solid-state HHG". 2023. 10.1117/12.2665519 Kishor Upadhyaya; Fatimah Alreshidi ; Hadeel Alamoudi ; Magalhães Esteves, Duarte ; Peres, Marco; K. Lorenz; Iman Roqan. "Effect of Sn+ ion implantation and post-annealing on enhancing ß-Ga2O3¿ based DUV self-powered photodetector performance". Paper presented in European Materials Research Society Spring Meeting 2023, 2023. Zanoni, Julia; Correia, Maria Rosário; Peres, Marco; Magalhães Esteves, Duarte ; Lorenz, Katharina; Monteiro, Teresa; Rodrigues, Joana Catarina Ferreira. Corresponding author: Rodrigues, Joana Catarina Ferreira. "Optically active centres in Pr-implanted ß-Ga2O3 single crystals". Paper presented in European Materials Research Society Spring Meeting 2023, 2023. Batista, Maria; Magalhães Esteves, Duarte ; Rodrigues, Ana Luísa; Marques Dias, Maria Isabel; Alves, LC; Alves, Eduardo; Costa, Florinda; et al. Corresponding author: Peres, Marco. "Ionizing radiation detection and dosimetric applications of Cr- doped Zinc Gallogermanate". Paper presented in European Materials Research Society Spring Meeting 2023, 2023. Verheij, Dirkjan; Alves, Luís Cerqueira; Vicentijevic, Milan; Jaksic, Milko; Peres, Marco; Cardoso, Susana; Alves, Eduardo; et al. "Ion beam induced current analysis in GaN core-shell p-n junction microwires". Paper presented in ICNMTA 2022, 2022. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Cr-doped ß- Ga2O3: Luminescence activation by irradiation-induced defects". Paper presented in Física 2022, 2022. Pereira, Daniela R.; Bouhafs, Chamseddine; Pereira, Sónia O.; Díaz-Guerra, Carlos; Peres, Marco; Fernandes, António J. S.; Kulyk, Bohdan; et al. "Field effect transistors on MoO3 crystals and pseudo-layers: fabrication and characterization". Paper presented in Física 2022. Faculdade de Ciências da Universidade do Porto, Portugal., 2022. Verheij, Dirkjan; Alves, Luís Cerqueira; Peres, Marco; Cardoso, Susana; Alves, Eduardo; Durand, Christophe; Eymery, Joël; et al. "Influence of proton irradiation damage on GaN core-shell p-n junction microwire radiation detectors". Paper presented in IBMM 2022, 2022. Zanoni, Julia; Magalhães Esteves, Duarte ; Jia, Z.; Mu, W.; Alves, LC; Lorenz, Katharina; Correia, Maria Rosário; et al. Corresponding author: Zanoni, Julia. "Kinetics and PL quenching evaluation of optically active centres in ß-Ga2O3". Paper presented in International Conference on Ion Beam Modification of Materials, 2022. Fernandes, T. P.; Magalhães Esteves, Duarte ; Alves, Luís; Santos, L. F.; Rodrigues, Ana Luísa; Maria Isabel Dias; Catarino, N.; Peres, Marco; Lorenz, Katharina. Corresponding author: Fernandes, T. P.. "Proton irradiation effects on hexagonal boron nitride crystals". Paper presented in 22nd International Conference on Ion Beam Modification of Materials (IBMM), 2022. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Sensitising the Cr3+ Luminescence by Irradiation-Induced Defects in ß-Ga2O3". Paper presented in 22nd International Conference on Ion Beam Modification of Materials (IBMM 2022), 2022. Marques, Gabriel; Carvalho, Alexandre Faia; Falcão, Bruno; Fernandes, António J. S.; Pereira, Sónia O.; Brinca, Ana; Costa, Florinda; et al. "Luminescent properties in CVD grown diamond single crystal modified by laser processing and ion implantation". Paper presented in IBMM 2022 – 22nd International Conference on Ion Beam Modification of Materials. Lisbon, Portugal, 2022. Pereira, Daniela R.; Bouhafs, Chamseddine; Pereira, Sónia O.; Díaz-Guerra, Carlos; Peres, Marco; Fernandes, António J. S.; Kulyk, Bohdan; et al. "Incorporation of modified MoO3 crystals and pseudo-layers into Field Effect Transistors". Paper presented in IBMM 2022 – 22nd International Conference on Ion Beam Modification of Materials. Lisbon, Portugal, 2022. J. Zanoni; D. M. Esteves; B. F. Falcão; J. P. Leitão; Z. Jia; W. Mu; L.C. Alves; et al. "Detailed spectroscopic analysis of doped ß-Ga2O3 with Si, Sn and Fe". Paper presented in Nano 2022, 2022. Zanoni, Julia; Magalhães Esteves, Duarte ; Bruno P. Falcão; Leitão, Joaquim P.; Rino, Luis; Jia, Z.; Mu, W.; et al. Corresponding author: Zanoni, Julia. "Detailed RT spectroscopic analysis of doped ß-Ga2O3 with Sn and Fe". Paper presented in NANO 2022, 2022. D. M. Esteves; M. Peres; A. L. Rodrigues; X. Biquard; J. Zanoni; J. Rodrigues; N. Ben Sedrine; et al. "Activation of the Cr3+ luminescence in proton-irradiated ß-Ga2O3". Paper presented in 3rd Condensed Matter Physics National Conference, 2022. J. Zanoni; D. M. Esteves; B. P. Falcão; J. P. Leitão; L. Rino; Z. Jia; W. Um; et al. "Detailed RT spectroscopic analysis of doped ß-Ga2O3 with Mg, Sn and Fe". Paper presented in NANO 2022 - 16th International Conference on Nanostructured Materials (ICNM), Sevilla, Spain, 2022. G. Marques; A. Carvalho; B. P. Falcão; A. J. Fernandes; S. O. Pereira; A. Brinca; F. Costa; et al. "Luminescent properties in CVD grown diamond single crystal modified by laser irradiation and ion implantation". Paper presented in IBMM 22 - 22nd International Conference on Ion Beam Modification of Materials, Lisbon, Portugal, 2022. Pereira, D. R.; C. Díaz-Guerra; Peres, António M.; S. Magalhães; J. G. Correia; E. Alves; S. Cardoso; P. P. Freitas; K. Lorenz. "Defects and electrical conductivity in ion-implanted a-MoO3 lamellar crystals". Paper presented in 13th IKZ Summer School in Oxides for Electronic Applications, 2021. N. Ben Sedrine; J. Cardoso; J. P. Teixeira; D. Nd. Faye; R. R.-Andrade; A. Gustafsson; P. M. P. Salomé; et al. "Probing the optical properties of III-V nanowires for optoelectronic applications". Paper presented in Nanowire Week 2019, 2019. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; M. Bockowski; V. Hoffmann; M. Weyers; K. Lorenz; M. R. Correia; T. Monteiro. "MOCVD-grown AlGaN/GaN superlattice structure tailored for bright red emitting diode". Paper presented in E-MRS Spring Meeting 2019, 2019. M. C. Sequeira; H. Vazquez; J.G. Mattei; F. Djurabekova; K. Nordlund; S. Zhang; I. Monnet; et al. "Effects of Swift Heavy Ions in Group-III Nitrides – A Multidisciplinary Study". Paper presented in Radiation Effects on Isolators (REI-20), Astana, Kazakhstan, 2019. A. Redondo-Cubero; J. Rodrigues; L. Vázquez; D. Jalabert; T. Monteiro; K. Lorenz; N. Ben Sedrine. "Optical analysis of the damage and surface roughness in nanorippled ZnO produced by ion irradiation". Paper presented in E-MRS Spring Meeting 2018, 2018. N. Ben Sedrine; J. Rodrigues; J. Cardoso; D. Nd. Faye; M. Fialho; S. Magalhães; A. J. Neves; et al. "Analysis of europium implantation and annealing -induced effects in AlGaN/GaN heterostructure". Paper presented in E-MRS Spring Meeting 2018, 2018. N. Ben Sedrine; J. Rodrigues; L. Vázquez; D. Jalabert; T. Monteiro; K. Lorenz; A. Redondo-Cubero. "ZnO nanoripples produced by medium energy ion beam sputtering: damage and roughness evolution". Paper presented in 20th International Conference on Surface Modification of Materials by ions Beams, 2017. N. Ben Sedrine; J. Cardoso; A. Alves; A. F. Martins; J. Rodrigues; A. J. Neves; D. Nd. Faye; et al. "Study of AlxGa1-xN nanowires implanted with Eu for solid-state nano-devices". Paper presented in 12th International Conference on Nitride Semiconductors, 2017. N. Ben Sedrine; J. Rodrigues; A. F. Martins; D. Nd. Faye; M. Fialho; S. Magalhães; M. R. Correia; et al. "Eu-implanted AlGaN/GaN diode structures towards efficient solid-state lighting". Paper presented in 12th International Conference on Nitride Semiconductors, 2017. D. Nd. Faye; M. Fialho; S. Magalhães; M. Felizardo; E. Alves; N. Ben Sedrine; J. Rodrigues; et al. "Structural, Optical and Electrical Characterization of Implanted AlGaN alloys". Paper presented in 40th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 2016. N. Ben Sedrine; J. Rodrigues; D. Nd. Faye; M. Fialho; S. Magalhães; M. R. Correia; A. J. Neves; et al. "Europium implantation and annealing effects in nitride LED structures". Paper presented in 40th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 2016. J. F. C. Carreira; J. Rodrigues; P.M.M. Correia; M. Peres; I. F. C. Castro; J. F. C. A. Veloso; L. Rino; et al. "Spectroscopic analysis of TSAG and TSLAG crystals". Paper presented in IBER 2015 (Joint Iberian Meeting on Atomic and Molecular Physics), 2015. J. F. C. Carreira; J. Rodrigues; P.M.M. Correia; M. Peres; I. F. C. Castro; J. F. C. A. Veloso; L. Rino; et al. "Structural and optical properties of TSAG and TSLAG crystals grown by Czochralski". Paper presented in CSI - Colloquium Spectroscopicum Internationale XXXIX, 2015. J. Rodrigues; T. C. Esteves; N. F. Santos; M. Fialho; L. Rino; A. J. Neves; K. Lorenz; E. Alves; T. Monteiro. "Photoluminescence studies in Tm implanted AlxGa1-xN layers". Paper presented in ANM 2015 (6th International Conference on Advanced Nanomaterials), 2015. N. Ben Sedrine; T. C. Esteves; J. Rodrigues; M. C. Sequeira; L. Rino; A. J. Neves; E. Alves; et al. "Towards white light in nitrides through defect engineering". Paper presented in ANM 2015 (6th International Conference on Advanced Nanomaterials), 2015. M. C. Sequeira; M. B. Lourenço; A. Redondo-Cubero; N. Franco; E. Alves; M. F. Leitão; J. Rodrigues; et al. "Quantum Well Intermixing in InGaN/GaN Structures". Paper presented in ICDS 28th International Conference on Defects in Semiconductors, 2015. J. Rodrigues; M. F. Leitão; J. F. C. Carreira; N. Ben Sedrine; N. F. Santos; M. Felizardo; T. Auzelle; et al. "GaN nanowires implanted with Eu3+ ions for solid-state light emission". Paper presented in E-MRS Spring Meeting 2015, 2015. N. Ben Sedrine; T. C. Esteves; J. Rodrigues; M. C. Sequeira; M. J. Soares; A. J. Neves; E. Alves; et al. "Room temperature white light emission in annealed III-nitride multi quantum wells". Paper presented in E-MRS Spring Meeting 2015, 2015. J. Rodrigues; M. F. Leitão; J. F. C. Carreira; N. Ben Sedrine; N. F. Santos; M. Felizardo; T. Auzelle; et al. "GaN:Eu3+ nanostructures for red solid state lighting". Paper presented in Research Day 2015 (University of Aveiro), 2015. M. C. Sequeira; A. Redondo-Cubero; E. Alves; M. P. Leitão; J. Rodrigues; N. Ben Sedrine; A. J. Neves; et al. "Swift Heavy Ion Interaction with Group-III Nitrides". Paper presented in International Conference on Defects in Semiconductors (ICDS 2015), Espoo, Finland, 2015. M. Fialho; T. C. Esteves; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; K. Lorenz; E. Alves. "Study of AlGaN Films Doped with Rare Earth Ions". Paper presented in EVC13 & IVM9 & ETCHC7 - 13th European Vacuum Conference & 9th Iberian Vacuum Meeting & 7th European Topical Conference on Hard Coatings, 2014. M.B. Lourenço; A. Redondo-Cubero; M. C. Sequeira; N. Franco; E. Alves; M. Sousa; T. C. Esteves; et al. "High Thermal Stability of InGaN/GaN Quantum Wells". Paper presented in EVC13 & IVM9 & ETCHC7 - 13th European Vacuum Conference & 9th Iberian Vacuum Meeting & 7th European Topical Conference on Hard Coatings, 2014. M. Fialho; D. N. Faye; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; K. Lorenz; E. Alves. "Study of the effect of implantation temperature on AlGaN compounds implanted with rare earth ions". Paper presented in IBMM 2014 - 19th International Conference on Ion Beam Modification of Materials, 2014. M. Sousa; T. C. Esteves; J. Rodrigues; M. B. Lourenço; S.M.C. Miranda; N. Ben Sedrine; A. Redondo-Cubero; et al. "Influence of the nitrogen implantation and thermal annealing on the structural and optical properties of the green emitting InGaN/GaN MQWs". Paper presented in ANM 2014 (5th International Conference on Advanced Nanomaterials), 2014. M. Felizardo; M. Peres; N. Franco; D. N. Faye; E. Alves; K. Lorenz; E. Nogales; et al. "Structural and Optical Properties of GaN Nanowires and Thin Films Implanted with Eu". Paper presented in ANM 2014 (5th International Conference on Advanced Materials), 2014. J. F. C. Carreira; M. F. Leitão; J. Rodrigues; N. Ben Sedrine; M. Peres; M. Felizardo; N. Franco; et al. "Optical Studies in Eu doped ß-Ga2O3 nanostructures". Paper presented in ANM 2014 (5th International Conference on Advanced Nanomaterials), 2014. J. Rodrigues; M. Fialho; S. Magalhães; M. R. Correia; L. Rino; E. Alves; A. J. Neves; K. Lorenz; T. Monteiro. "Spectroscopic characteristics of Tb3+ ions in AlxGa1-xN (0=x=1) layers". Paper presented in ICL’14 (17th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter), 2014. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; E. Alves. "Structural and optical characterization of AlxGa1-xN alloys doped with Rare Earth ions". Paper presented in E-MRS Spring Meeting 2014, 2014. T. C. Esteves; J. Rodrigues; M. Sousa; C. Nico; M. B. Lourenço; A. Redondo-Cubero; N. Franco; et al. "Optical and structural characterization of heat treated InGaN/GaN SQW and MQW for quantum well intermixing". Paper presented in E-MRS Spring Meeting 2014, 2014. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; A. J. Neves; T. Monteiro; E. Alves. "Effect of AlN content on the optical and structural properties of Rare Earth implanted AlGaN compounds". Paper presented in MRS Spring Meeting 2014, 2014. J. Rodrigues; S.M.C. Miranda; A. J. S. Fernandes; L. C. Alves; E. Alves; A. J. Neves; G. Tourbot; et al. "Luminescence sensing based on GaN NWs implanted with lanthanide ions". Paper presented in NanoPT 2014, 2014. T. C. Esteves; J. Rodrigues; M. Sousa; C. Nico; M. B. Lourenço; A. Redondo-Cubero; N. Franco; et al. "Investigation of the effects of heat treatments on InGaN/GaN single and multiple quantum wells (SQW, MQWs) for quantum well intermixing (QWI)". Paper presented in NanoPT 2014, 2014. J. Rodrigues; S.M.C. Miranda; A.J.S. Fernandes; E. Nogales; L.C. Alves; E. Alves; A. J. Neves; et al. "Luminescence studies in GaN nanowires implanted with lanthanide ions". Paper presented in Research day 2013 (University of Aveiro), 2013. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves. "Optical and structural studies of AlxGa1-xN alloys doped with Tm and Pr rare earth ions". Paper presented in Congresso Materiais 2013, 2013. M. Fialho; K. Lorenz; S. Magalhães; J. Rodrigues; N. F. Santos; T. Monteiro; E. Alves. "Optical and structural characterization of AlxGa1-xN alloys doped with terbium rare earth ions". Paper presented in E-MRS Spring Meeting 2013, 2013. N. Catarino; K. Lorenz; N. Franco; V. Darakchieva; E. Nogales; B. Méndez; J. Rodrigues; T. Monteiro; B. Lacroix. "Damage formation in non-polar GaN when host for rare earth ions". Paper presented in Física 2012- 18ª Conferência Nacional de Física (CNF), 2012. N. F. Santos; A. J. S. Fernandes; L.C. Alves; E. Alves; K. Lorenz; F. M. Costa; T. Monteiro. "Microprobe analysis, iono- and photo- luminescence of manganese activated ZnGa2O4 fibres". Paper presented in 13th International Conference Nuclear Microprobe Technology & Applications (ICNMTA 2012), 2012. J. Rodrigues; S. M. C. Miranda; N. F. Santos; A. J. Neves; E. Alves; K. Lorenz; T. Monteiro. "GaN and AlN layers co-doped with Eu and Pr ions for solid state lighting applications". Paper presented in i3N Meeting 2012, 2012. N. Catarino; K. Lorenz; N. Franco; V. Darakchieva; E. Alves; E. Nogales; B. Méndez; et al. "Non-polar GaN as host for rare earth ions". Paper presented in ICNS-9 (9th International Conference on Nitride Semiconductors), 2011. M.-Y. Xie; V. Darakchieva; R. Yazdi; R. Yakimova; J. Rodrigues; T. Monteiro; E. Alves; K. Lorenz. "Doping of AlN micro-and nanorods with Eu3+". Paper presented in ICNS-9 (9th International Conference on Nitride Semiconductors), 2011. M. Peres; J. Rodrigues; M. J. Soares; A. J. Neves; T. Monteiro; S. Magalhães; K. Lorenz; et al. "Influence of neutron irradiation and annealing on the structural and optical properties of GaN". Paper presented in E-MRS Spring Meeting 2011, 2011. M.-Y. Xie; R. Yazdi; R. Yakimova; J. Rodrigues; T. Monteiro; E. Alves; K. Lorenz; V. Darakchieva. "Optical Doping of AlN Micro- and Nanorods by Rare Earth Ions Micro". Paper presented in IWN 2010 (International Workshop on Nitride Semiconductors), 2010. M. Peres; J. Rodrigues; M. J. Soares; A. J. Neves; T. Monteiro; S. Magalhães; E. Alves; et al. "The role of the annealing temperature on the optical and structural properties of Eu doped GaN QDs/AlN SL". Paper presented in E-MRS Spring Meeting 2010, 2010.
Journal article	Yamaga, Mitsuo; Singh, Akhilesh K.; Cameron, Douglas; Edwards, Paul R.; Lorenz, Katharina; Kappers, Menno J.; Bockowski, Michal. "Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu". Journal of Luminescence 270 (2024): 120557. http://dx.doi.org/10.1016/j.jlumin.2024.120557. 10.1016/j.jlumin.2024.120557 Sierakowski, Kacper; Jaroszynski, Piotr; Jakiela, Rafal; Fijalkowski, Michal; Sochacki, Tomasz; Iwinska, Malgorzata; Turek, Marcin; Lorenz, Katharina; Bockowski, Michal. "Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride". Materials Science in Semiconductor Processing 171 (2024): 108022. http://dx.doi.org/10.1016/j.mssp.2023.108022. 10.1016/j.mssp.2023.108022 Verheij, Dirkjan; Vicentijevic, Milan; Jakšic, Milko; Peres, Marco; Alves, Luís Cerqueira; Cardoso, Susana; Alves, Eduardo; et al. "Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements". ACS Applied Electronic Materials (2024): http://dx.doi.org/10.1021/acsaelm.3c01584. 10.1021/acsaelm.3c01584 Magalhães Esteves, Duarte; Rodrigues, Ana Luísa; Dias, Maria Isabel; Alves, Luís Cerqueira; Jia, Zhitai; Mu, Wenxiang; Lorenz, Katharina; Peres, Marco. "Thermoluminescence Studies of Proton-Irradiated Cr-, Mg-Codoped ß-Ga₂O₃". ACS Omega 8 50 (2023): 47874-47882. http://dx.doi.org/10.1021/acsomega.3c06429. 10.1021/acsomega.3c06429 Candeias, Maria B.; Fernandes, Tiago V.; Falcão, Bruno P.; Cunha, António F.; Cunha, José M. V.; Barbosa, João; Teixeira, Jennifer P.; et al. "Cu(In,Ga)Se$$_2$$-based solar cells for space applications: proton irradiation and annealing recovery". Journal of Materials Science 58 42 (2023): 16385-16401. http://dx.doi.org/10.1007/s10853-023-09033-x. 10.1007/s10853-023-09033-x Caçador, A.; Józwik, P.; Magalhães, S.; Marques, J.G.; Wendler, E.; Lorenz, K.. "Extracting defect profiles in ion-implanted GaN from ion channeling". Materials Science in Semiconductor Processing 166 (2023): 107702. http://dx.doi.org/10.1016/j.mssp.2023.107702. 10.1016/j.mssp.2023.107702 Mieszczynski, Cyprian; Jozwik, Przemyslaw; Skrobas, Kazimierz; Stefanska-Skrobas, Kamila; Ratajczak, Renata; Jagielski, Jacek; Garrido, Frederico; et al. "Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 540 (2023): 38-44. http://dx.doi.org/10.1016/j.nimb.2023.04.010. 10.1016/j.nimb.2023.04.010 Józwik, Przemyslaw; Caçador, Afonso; Lorenz, Katharina; Ratajczak, Renata; Mieszczynski, Cyprian. "Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 538 (2023): 198-204. http://dx.doi.org/10.1016/j.nimb.2023.03.002. 10.1016/j.nimb.2023.03.002 Magalhães, S; Cabaço, J S; Concepción, O; Buca, D; Stachowicz, M; Oliveira, F; Cerqueira, M F; Lorenz, K; Alves, E. "Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors". Journal of Physics D: Applied Physics 56 24 (2023): 245102. http://dx.doi.org/10.1088/1361-6463/acc597. 10.1088/1361-6463/acc597 Esteves, D. M.; Rodrigues, A. L.; Alves, L. C.; Alves, E.; Dias, M. I.; Jia, Z.; Mu, W.; Lorenz, K.; Peres, M.. "Probing the Cr3+ luminescence sensitization in ß-Ga2O3 with ion-beam-induced luminescence and thermoluminescence". 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Journal of Applied Physics 103 7 (2008): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000255043200018&KeyUID=WOS:000255043200018. 10.1063/1.2898533 Lorenz, K; Alves, E; Roqan, IS; Martin, RW; Trager-Cowan, C; O'Donnell, KP; Watson, IM. "Rare earth doping of III-nitride alloys by ion implantation". Physica Status Solidi a-Applications and Materials Science 205 1 (2008): 34-37. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252877300009&KeyUID=WOS:000252877300009. 10.1002/pssa.200776714 Roqan, IS; O'Donnell, KP; Trager-Cowan, C; Hourahine, B; Martin, RW; Lorenz, K; Alves, E; et al. "Luminescence spectroscopy of Eu-implanted zincblende GaN". Physica Status Solidi B-Basic Solid State Physics 245 1 (2008): 170-173. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000252710500026&KeyUID=WOS:000252710500026. 10.1002/pssb.200743372 Hums, C; Blasing, J; Dadgar, A; Diez, A; Hempel, T; Christen, J; Krost, A; Lorenz, K; Alves, E. "Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range (vol 90, art no 022105, 2007)". Applied Physics Letters 91 2 (2007): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000249787000120&KeyUID=WOS:000249787000120. 10.1063/1.2785981 Bodiou, L; Braud, A; Terpin, C; Doualan, JL; Moncorge, R; Lorenz, K; Alves, E. "Spectroscopic investigation of implanted epilayers of Tm3+ : GaN". Journal of Luminescence 122 (2007): 131-133. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000242991900040&KeyUID=WOS:000242991900040. 10.1016/j.jlumin.2006.01.124 Magalhaes, S; Lorenz, K; Peres, M; Monteiro, T; Tripathy, S; Alves, E. "Implantation of nanoporous GaN with eu ions". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 257 (2007): 328-331. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000246165500075&KeyUID=WOS:000246165500075. 10.1016/j.nimb.2007.01.027 Lorenz, K; Geruschke, T; Alves, E; Vianden, R. "Temperature dependence of the electric field gradient in GaN measured with the PAC-probe Hf-181". Hyperfine Interactions 177 1-3 (2007): 89-95. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000260182900013&KeyUID=WOS:000260182900013. 10.1007/s10751-008-9708-7 Lorenz, K; Franco, N; Alves, E; Watson, IM; Martin, RW; O'Donnell, KP. "Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state". Physical Review Letters 97 8 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000240043800033&KeyUID=WOS:000240043800033. 10.1103/PhysRevLett.97.085501 Gloux, F.; Wójtowicz, T.; Ruterana, P.; Lorenz, K.; Alves, E.; Gloux, F; Wojtowicz, T; et al. "Behaviour of the AlN cap during GaN implantation of rare earths and annealing". Physica Status Solidi (A) Applications and Materials Science 203 9 (2006): 2172-2175. http://www.scopus.com/inward/record.url?eid=2-s2.0-33746325177&partnerID=MN8TOARS. 10.1002/pssa.200566034 Marques, JG; Lorenz, K; Franco, N; Alves, E. "Defect production in neutron irradiated GaN". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 249 (2006): 358-361. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000239545000087&KeyUID=WOS:000239545000087. 10.1016/j.nimb.2006.04.028 Roqan, IS; Lorenz, K; O'Donnell, KP; Trager-Cowan, C; Martin, RW; Watson, IM; Alves, E. "Blue cathodoluminescence from thulium implanted AlxGa1-xN and InxAl1-xN". Superlattices and Microstructures 40 4-6 (2006): 445-451. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200041&KeyUID=WOS:000243208200041. 10.1016/j.spmi.2006.07.029 Wang, K; Martin, RW; Nogales, E; Edwards, PR; O'Donnell, KP; Lorenz, K; Alves, E; Watson, IM. "Cathodoluminescence of rare earth implanted AlInN". Applied Physics Letters 89 13 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000240875800042&KeyUID=WOS:000240875800042. 10.1063/1.2357343 Lorenz, K; Wahl, U; Alves, E; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; et al. "High temperature annealing of rare earth implanted GaN films: Structural and optical properties". Optical Materials 28 6-7 (2006): 750-758. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500037&KeyUID=WOS:000236916500037. 10.1016/j.optmat.2005.09.015 Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K; Alves, E. "Effect of annealing temperature on luminescence in Eu implanted GaN". Optical Materials 28 6-7 (2006): 780-784. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500043&KeyUID=WOS:000236916500043. 10.1016/j.optmat.2005.09.022 Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K; Alves, E; Ruffenach, S; Briot, O. "Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing". Applied Physics Letters 88 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000234757100013&KeyUID=WOS:000234757100013. 10.1063/1.2162797 Lorenz, K; Alves, E; Monteiro, T; Soares, MJ; Peres, M; Smulders, PJM. "Optical doping of AlN by rare earth implantation". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 242 1-2 (2006): 307-310. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236225200081&KeyUID=WOS:000236225200081. 10.1016/j.nimb.2005.08.037 Wang, K; Martin, RW; Nogales, E; Katchkanov, V; O'Donnell, KP; Hernandez, S; Lorenz, K; et al. "Optical properties of high-temperature annealed Eu-implanted GaN". Optical Materials 28 6-7 (2006): 797-801. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500047&KeyUID=WOS:000236916500047. 10.1016/j.optmat.2005.09.026 Hernandez, S; Cusco, R; Artus, L; Nogales, E; Martin, RW; O'Donnell, KP; Halambalakis, G; et al. "Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation". Optical Materials 28 6-7 (2006): 771-774. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500041&KeyUID=WOS:000236916500041. 10.1016/j.optmat.2005.09.021 Peres, M; Cruz, A; Soares, MJ; Neves, AJ; Monteiro, T; Lorenz, K; Alves, E. "Optical and structural studies in Eu-implanted AlN films". Superlattices and Microstructures 40 4-6 (2006): 537-544. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200057&KeyUID=WOS:000243208200057. 10.1016/j.spmi.2006.07.031 Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E. "TEM investigation of Tm implanted GaN, the influence of high temperature annealing". Optical Materials 28 6-7 (2006): 738-741. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000236916500034&KeyUID=WOS:000236916500034. 10.1016/j.optmat.2005.09.012 Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K; Alves, E. "The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer". Superlattices and Microstructures 40 4-6 (2006): 300-305. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200018&KeyUID=WOS:000243208200018. 10.1016/j.spmi.2006.07.016 Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K; Alves, E; Gloux, F.; Ruterana, P.; et al. "Rare earth ion implantation in GaN: Damage formation and recovery". Acta Physica Polonica a 110 2 (2006): 125-137. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000240446200004&KeyUID=WOS:000240446200004. 10.12693/APhysPolA.110.125 Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E. "Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN". Physica Status Solidi B-Basic Solid State Physics 243 7 (2006): 1541-1544. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000238752200027&KeyUID=WOS:000238752200027. 10.1002/pssb.200565256 Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K; Alves, E. "Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation". Journal of Applied Physics 100 7 (2006): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000241248000031&KeyUID=WOS:000241248000031. 10.1063/1.2357845 Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K; Alves, E. "UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers". Superlattices and Microstructures 40 4-6 (2006): 440-444. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000243208200040&KeyUID=WOS:000243208200040. 10.1016/j.spmi.2006.06.020 Lorenz, K; Alves, E; Wendler, E; Bilani, O; Wesch, W; Hayes, M. "Damage formation and annealing at low temperatures in ion implanted ZnO". Applied Physics Letters 87 19 (2005): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000233058800017&KeyUID=WOS:000233058800017. 10.1063/1.2126137 Wang, K; Martin, RW; O'Donnell, KP; Katchkanov, V; Nogales, E; Lorenz, K; Alves, E; Ruffenach, S; Briot, O. "Selectively excited photoluminescence from Eu-implanted GaN". Applied Physics Letters 87 11 (2005): http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000231802200031&KeyUID=WOS:000231802200031. 10.1063/1.2045551 Lorenz, K; Vianden, R. "Anomalous temperature dependence of the EFG in AlN measured with the PAC-probes Hf-181 and In-111". Hyperfine Interactions 158 1-4 (2004): 273-279. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000235281400044&KeyUID=WOS:000235281400044. 10.1007/s10751-005-9044-0 Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K; et al. "Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy". Superlattices and Microstructures 36 4-6 (2004): 713-719. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000225762800038&KeyUID=WOS:000225762800038. 10.1016/j.spmi.2004.09.027 Lorenz, K; Wahl, U; Alves, E; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O. "Amorphisation of GaN during processing with rare earth ion beams". Superlattices and Microstructures 36 4-6 (2004): 737-745. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000225762800041&KeyUID=WOS:000225762800041. 10.1016/j.spmi.2004.09.030 Katchkanov, V.; Mosselmans, J.F.W.; Dalmasso, S.; O'Donnell, K.P.; Hernandez, S.; Wang, K.; Martin, R.W.; et al. "Extended X-ray absorption fine structure studies of thulium doped GaN epilayers". Superlattices and Microstructures 36 4-6 (2004): 729-736. http://www.scopus.com/inward/record.url?eid=2-s2.0-10044293362&partnerID=MN8TOARS. 10.1016/j.spmi.2004.09.029 Lorenz, K; Wahl, U; Alves, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O. "High-temperature annealing and optical activation of Eu-implanted GaN". Applied Physics Letters 85 14 (2004): 2712-2714. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000224547300012&KeyUID=WOS:000224547300012. 10.1063/1.1801686 Lorenz, K; Alves, E; Wahl, U; Monteiro, T; Dalmasso, S; Martin, RW; O'Donnell, KP; Vianden, R. "Implantation and annealing studies of Tm-implanted GaN". Materials Science and Engineering B-Solid State Materials For Advanced Technology 105 1-3 (2003): 97-100. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000187457300023&KeyUID=WOS:000187457300023. 10.1016/j.mseb.2003.08.023 Wahl, U; Alves, E; Lorenz, K; Correia, JG; Monteiro, T; De Vries, B; Vantomme, A; Vianden, R. "Lattice location and optical activation of rare earth implanted GaN". Materials Science and Engineering B-Solid State Materials For Advanced Technology 105 1-3 (2003): 132-140. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000187457300031&KeyUID=WOS:000187457300031. 10.1016/j.mseb.2003.08.031 Narayanan, V.; Lorenz, K.; Kim, W.; Mahajan, S.. "Gallium nitride epitaxy on (0001) sapphire". Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties 82 5 (2002): 885-912. http://www.scopus.com/inward/record.url?eid=2-s2.0-0037139813&partnerID=MN8TOARS. 10.1080/01418610110095698 Lorenz, K; Ruske, F; Vianden, R. "Reversible changes in the lattice site structure for In implanted into GaN". Applied Physics Letters 80 24 (2002): 4531-4533. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000176128100017&KeyUID=WOS:000176128100017. 10.1063/1.1485117 Lorenz, K; Ruske, F; Vianden, R. "Annealing behaviour of GaN after implantation with hafnium and indium". Physica Status Solidi B-Basic Research 228 1 (2001): 331-335. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000172513100071&KeyUID=WOS:000172513100071. Alves, E; Lorenz, K; Vianden, R; Boemare, C; Soares, MJ; Monteiro, T; Alves, E.; et al. "Optical doping of nitrides by ion implantation". Modern Physics Letters B 15 28-29 (2001): 1281-1287. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000173764500003&KeyUID=WOS:000173764500003. 10.1142/S0217984901003172 Monteiro, T; Boemare, C; Soares, MJ; Ferreira, RAS; Carlos, LD; Lorenz, K; Vianden, R; Alves, E. "Photoluminescence and lattice location of Eu and Pr implanted GaN samples". Physica B-Condensed Matter 308 (2001): 22-25. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000173660100006&KeyUID=WOS:000173660100006. 10.1016/S0921-4526(01)00656-1 Bartels, J; Lorenz, K; Ruske, F; Tessema, G; Vianden, R; Bartels, J.; Lorenz, K.; et al. "Dopants in semiconductors studied by perturbed angular correlation". Acta Physica Polonica a 100 5 (2001): 585-602. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000172729900002&KeyUID=WOS:000172729900002. 10.12693/APhysPolA.100.585 Wruck, D; Lorenz, K; Vianden, R; Reinhold, B; Mahnke, HE; Baranowski, JM; Pakula, K; et al. "Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films". Semiconductor Science and Technology 16 11 (2001): L77-L80. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000172222400001&KeyUID=WOS:000172222400001. 10.1088/0268-1242/16/11/101 Lorenz, K; Vianden, R; Pearton, SJ; Abernathy, CR; Zavada, JM; Lorenz, K.; Vianden, R.; et al. "Defect trapping and annealing for transition metal implants in group III nitrides". Mrs Internet Journal of Nitride Semiconductor Research 5 5 (2000): 1-7. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000090104500001&KeyUID=WOS:000090104500001. Lorenz, K; Vianden, R; Birkhahn, R; Steckl, AJ; da Silva, MF; Soares, JC; Alves, E. "RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates". Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms 161 (2000): 946-951. http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000086204100179&KeyUID=WOS:000086204100179. 10.1016/S0168-583X(99)00683-7
Thesis / Dissertation	Lorenz, Katharina. "Implantationsstudien an Gruppe-III-Nitriden (Implantation Studies in Group-III-Nitrides)". PhD, 2002. Lorenz, Katharina. "Untersuchungen zur Joddiffusion in GaAs (Investigation of the Diffusion of Iodine in GaAs)". Master, 1998.

Activities

Supervision

	Thesis Title Role	Degree Subject (Type) Institution / Organization
2024 - 2024	Optimizing Gallium Oxide Thin Films for Electro-Optical Applications Co-supervisor of Ana Sofia Camões de Sousa
2018 - 2024	Funcionalização do MoO3 por Engenharia de Defeitos Supervisor of Daniela Filipa Rodrigues Pereira	Universidade de Lisboa Instituto Superior Técnico, Portugal
2023 - 2023	Ga2O3 membrane nanodevices Co-supervisor of Miguel Cardoso Pedro
2022 - 2023	Monte Carlo simulations of ion channelling spectra to study implantation damage in GaN with different surface orientations Supervisor of Luís Filipe Dias Vítor Martins
2021 - 2023	Ga2O3 field effect transistors for sensor applications Co-supervisor of Miguel Eduardo Dias Vítor Martins	Universidade de Lisboa Instituto Superior Técnico, Portugal
2018 - 2023	Fabrication and Characterization of Single GaN Microwire Radiation Sensors: Assessment of the detection capabilities and radiation resistance Supervisor of Dirkjan Verheij	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022	Two-dimensional MoO3 for sensor applications Co-supervisor of João Guilherme Monteiro Correia	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022	Proton Irradiation effects on nanomembranes and FETs based on h-BN Co-supervisor of Tiago Pardal Fernandes	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2021	Cr-doped Ga2O3 for radiation detection Co-supervisor of Duarte Magalhães Esteves	Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2021	Group-III Nitrides Response to Strongly Ionising Radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN Supervisor of Miguel Pereira Carvalho Alves de Sequeira	Universidade de Lisboa Instituto Superior Técnico, Portugal
2015 - 2021	Post-doc project: Engenharia de defeitos e funcionalização de semicondutores de largo hiato energético Supervisor of Marco António Baptista Peres	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2019	PV plant performance data analysis and modelling Co-supervisor of Francesca Martin	Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 - 2018	Measuring strain caused by ion implantation in GaN Supervisor of Pedro José de Sousa Mendes	Universidade de Lisboa Instituto Superior Técnico, Portugal
2013 - 2018	Ion implantation in AlxGa1-xN alloys and GaN nanostructures Supervisor of Djibril Nd. Faye	Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2017	Radiation sensors based on GaN microwires Supervisor of Dirkjan Verheij	Universidade de Lisboa Instituto Superior Técnico, Portugal
2016 - 2017	Modificação das propriedades elétricas de MoO3 por tratamento térmico e irradiação Supervisor of Daniela Filipa Rodrigues Pereira	Universidade Nova de Lisboa, Portugal
2015 - 2016	Electrical characterization and modification of low dimensional oxide semiconductors for sensor applications Supervisor of Flávia Cristina Monteiro Rocha	Universidade Nova de Lisboa, Portugal
2013 - 2014	Post-doc project: Implantation of rare earths in GaN nanowires Supervisor of Miguel António Felizardo da Costa	Universidade de Lisboa Instituto Superior Técnico, Portugal
2011 - 2014	Post-doc project: Modification and characterization of advanced wide bandgap semiconductor nanostructures by ion beam techniques Supervisor of Andrés Redondo-Cubero	Universidade de Lisboa Instituto Superior Técnico, Portugal
2009 - 2013	Caracterização e modificação de heteroestruturas de nitretos do grupo III Supervisor of Sérgio Nuno Canteiro de Magalhães	Universidade de Aveiro, Portugal
2010 - 2011	Implantação de terras raras em GaN com orientação polar e não-polar Supervisor of Norberto José Sobral Catarino	Universidade de Lisboa Faculdade de Ciências, Portugal

Event organisation

	Event name Type of event (Role)	Institution / Organization
2024 - 2024	Session “Characterization and defects in crystalline materials”, 8th European Conference on Crystal Growth ECCG 2024, 21-25 July Warsaw, Poland (2024/07/21 - 2024/07/25)
2023 - 2023	Co-Chair: Mini-Colloquium on “Tuning materials properties through controlled disorder” at the conference of the conference of the Condensed Matter Division of the European Physical Society, CMD30, September 4-8, 2023, Milan, Italy. (2023/09/04 - 2023/09/08)
2022/07/05 - 2022/07/10	22th IBMM - Ion Beam Modification of Materials, (2022/07/05 - 2022/07/10) Conference (Co-organisor)
2022 - 2022	Symposium “Defects, doping and processing of semiconductor nanostructures”, at the 16th International Conference on Nanostructures Materials – NANO2022, June 6-10, 2022, Seville, Spain. (2022 - 2022) Conference (Co-organisor)
2022 - 2022	16th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 3-6, 2022, Ponta Delgada, Portugal. The conference was held together with the 45th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe. (2022 - 2022) Conference (Co-organisor)
2019/06/17 - 2019/06/19	Workshop Ion Beams Meet Semiconductors (SMIB 2019) (2019/06/17 - 2019/06/19) Conference (President of the Organising Committee)
2018/07/04 - 2018/07/06	Symposium Wide-bandgap semiconductors, 1st Iberian Meeting on Materials Science (2018/07/04 - 2018/07/06) Conference (Co-organisor)
2018/06/18 - 2018/06/22	Symposium “New developments in the modelling and analysis of radiation damage in materials”, EMRS Spring Meeting (2018/06/18 - 2018/06/22) Conference (Co-organisor)
2016/06/06 - 2016/06/10	13th EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (2016/06/06 - 2016/06/10) Conference (Co-organisor)
2015/06/25 - 2015/06/26	Workshop Ion Beams Meet Semiconductors (SMIB 2015), (2015/06/25 - 2015/06/26) Conference (President of the Organising Committee)
2015/04/21 - 2015/04/25	Symposium Advanced Characterization Techniques for Ion-Beam-Induced Effects in Materials, MRS Spring Meeting (2015/04/21 - 2015/04/25) Conference (Co-organisor)
2013/05/27 - 2013/05/31	Symposium Functional Nanowires: Synthesis, Characterization and Applications, EMRS Spring Meeting (2013/05/27 - 2013/05/31) Conference (Co-organisor)
2008/04/01 - 2008/04/03	International Workshop on New Trends and Applications of Ion Beams (NTAIB-2008) (2008/04/01 - 2008/04/03) Conference (Co-organisor)

Event participation

	Activity description Type of event	Event name Institution / Organization
2023 - 2023	Defect Engineering in Wide Bandgap Semiconductors: 25th International Conference on Ion-Surface Interactions ISI-2023, on-line participation, August 21-25, 2023. Conference	25th International Conference on Ion-Surface Interactions
2023 - 2023	Invited talk: 4. Radiation Effects in Wide Bandgap Materials: 51st International School & Conference on the Physics of Semiconductors Jaszowiec 2023, Szczyrk, Poland, June 17-23, 2023 Conference	Conference on the Physics of Semiconductors Jaszowiec 2023
2023 - 2023	Invited talk: Research at the Portuguese Ion Beam Laboratory: Technical Meeting on Novel Applications of Accelerator-based Techniques for Socio-economic Benefits, International Atomic Energy Agency, IAEA December 11, 2023 Meeting	Technical Meeting on Novel Applications of Accelerator-based Techniques for Socio-economic Benefits International Atomic Energy Agency, Austria
2023 - 2023	Invited talks: Radiation Sensors Based on Novel Wide Bandgap Semiconductor Structures: 28th International Conference on Nuclear Tracks & Radiation Measurements (ICNTRM), 6-10 November 2023, Gurugram University, Haryana, India Conference	International Conference on Nuclear Tracks & Radiation Measurements
2023 - 2023	Invited talk: Ion Beam Processing of Quasi-2D Oxides: 7th International Conference on Nanostructuring by Ion Beams (ICNIB 2023) November 2-4, 2023, UPES Dehradun, India Conference	International Conference on Nanostructuring by Ion Beams
2022 - 2022	Invited talk: Ion implantation and defect engineering in wide bandgap semiconductor nanostructures, Fall Meeting of the European Materials Research Society (E-MRS), Symposium M: Defect-induced effects in nanomaterials, Warsaw, Poland, September 19-22, 2022. Conference	Fall Meeting of the European Materials Research Society (E-MRS), Symposium M: Defect-induced effects in nanomaterials,
2022 - 2022	Radiation effects in gallium oxide, Fall Meeting of the European Materials Research Society (E-MRS), Symposium F: Ultra-wide band-gap semiconductors for energy and electronics, Warsaw, Poland, September 19-22, 2022. Conference	Fall Meeting of the European Materials Research Society (E-MRS), Symposium F: Ultra-wide band-gap semiconductors for energy and electronics
2021/01/21 - 2021/01/21	Invited Webinar: Ion Implantation and Radiation Effects in Gallium Nitride Workshop	EMIRUM 2021, @ EMIR Users Meeting Polytechnique Palaiseau, France
2021 - 2021	Plenary Talk Ion implantation and radiation effects in group-III nitride semiconductors Conference	Applied Nuclear Physics Conference, ANPC2021, Prague, Czech Republic, September 12-16, 2021.
2021 - 2021	Invited Talk: Ion beams for the development of radiation resistant semiconductors Conference	Particles and Nuclei International Conference, PANIC2021, virtual conference, Lisbon, Portugal, September 5-10, 2021.
2021 - 2021	Invited Talk: Radiation effects in wide bandgap semiconductors Conference	Spring Meeting of the European Materials Research Society (E-MRS), Symposium L: New developments in the modelling and analysis of radiation damage in materials II, Strasbourg, France, May 31-June 3, 2021.
2021 - 2021	Invited Talk: Radiation sensors based on GaN microwires Conference	25th International Conference on Ion-Surface Interactions ISI-2021, Yaroslavl, Russia, August 23-27, 2021.
2021 - 2021	Invited Webinar: Ion beam modification of ß-Ga2O3 Seminar	Webinar at the research network GraFOx, Berlin, Germany, June 17, 2021.
2021 - 2021	Invited Lecture: Tailoring material properties by ion implantation Other	Virtual Spring School on Ion Beam Modification of Materials of the European project RADIATE, Instituto Superior Técnico, April 28-30, 2021.
2020 - 2020	Invited Webinar: Ion beams in III-nitride research: Doping, characterisation and radiation resistant electronics, Semi-talk Webinar, King Abdullah University of Science and Technology, Saudi Arabia	King Abdullah University of Science and Technology, Saudi Arabia
2018 - 2018	Invited Talk Ion implantation and iono-luminescence studies in ß-Ga2O3 Conference	SPIE Photonics West: Oxide-based Materials and Devices IX, San Francisco, USA, January 27 – February 1, 2018
2017 - 2017	Invited Talk Europium doping of Ga2O3 by ion implantation Conference	23rd International Conference on Ion-Surface Interactions (ISI-2017), Moscow, Russia, August 21-25, 2017
2017 - 2017	Invited Talk Radiation Effects and Quantum Well Intermixing in InGaN/GaN Multi Quantum Wells Conference	19th International Conference on Radiation Effects in Insulators (REI-19), Versailles, France, July 2-7, 2017
2017 - 2017	Invited Talk Ion implantation of GaN nanowires Conference	FOR3NANO: Formation of 3D Nanostructures by Ion Beams, Helsinki, Finland, June 28-30, 2017
2016 - 2016	Invited Talk Ion beam modification of group-III-nitride nanostructures Conference	20th International Conference on Ion Beam Modification of Materials (IBMM 2016), Wellington, New Zealand, October 30 - November 4, 2016
2016 - 2016	Invited Talk Compositional analysis of III-nitride ternary and quaternary alloys: Challenges and the benefit of ion beam analysis techniques Conference	Workshop on Ion Beam Analysis in the Commercial Environment, Rotorua, New Zealand, October 26-28, 2016
2016 - 2016	Invited Talk Ion implantation in group-III nitride semiconductors Conference	6th Ion Beam Analysis Francophone, IBAF-2016, Annecy, France, September 26-30, 2016
2016 - 2016	Invited Talk Técnicas de feixes de iões no desenvolvimento de materiais para a iluminação Conference	20ª Conferência Nacional da Física, 26º Encontro Ibérico para o ensino da Física, Universidade do Minho, Braga, Portugal, September 8 – 10, 2016
2016 - 2016	Invited Talk Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells Conference	SPIE Photonics West, Gallium Nitride Materials and Devices XI (Conference OE107), San Francisco, USA, February 13 – 18, 2016
2015 - 2015	Invited Talk Characterization and modification of semiconductor nanostructures by ion beams Conference	XIII Iberian Meeting on Atomic and Molecular Physics IBER 2015, Aveiro, Portugal, September 6-9, 2015
2013 - 2013	Invited Talk Ion implantation and rare earth doping of group-III nitride semiconductors Conference	21st International Conference on Ion-Surface Interactions ISI-2013, Yaroslavl, Russia, August 22-26, 2013
2011 - 2011	Invited Talk Rare Earth doping of III-nitrides by ion implantation: from 3D to 0D Conference	Fall Meeting of the European Materials Research Society (E-MRS), Symposium J: Rare earth doped semiconductors and nanostructures for photonics, Warsaw, Poland, September 19 – 23, 2011
2011 - 2011	Invited Talk Radiation damage formation and annealing in GaN and ZnO Conference	SPIE Photonics West, Oxide-based Materials and Devices II (Conference 7940), San Francisco, USA, January 22 – 27, 2011
2010 - 2010	Invited Talk Ion Beam Analysis of III-Nitride Semiconductors: From Thin Films to Nano-Structures Conference	IX International Conference of Polish Society for Crystal Growth ICPSCG-9 and 5th International Conference on Physics of Disordered Systems PDS10, Gdansk Sobieszewo, Poland, Mai 23 – 27, 2010
2009 - 2009	Invited Talk Al1-xInxN/GaN bilayers: structure, purity and optical properties Conference	8th International Conference on Nitride Semiconductors, ICNS-8, Jeju, Korea, October 18 – 23, 2009
2008 - 2008	Invited Talk Rare Earth implantation of III-nitride semiconductors for light emission from IR to UV Conference	16th International Conference on Ion Beam Modification of Materials (IBMM 2008), Dresden, Germany, August 31 - September 5, 2008
2005 - 2005	Invited Talk RBS/Channelling analysis of GaN quantum dots in AlN Multilayers Conference	XVII International Conference on Ion Beam Analysis (IBA), Seville, Spain, June 26 – July 1, 2005
2005 - 2005	Invited Talk High Temperature Annealing of Rare Earth Implanted GaN-Films: Structural and Optical Properties Conference	Spring Meeting of the European Materials Research Society (E-MRS), Symposium C: Rare earth doped photonic materials, Strasbourg, France, May 31 – June 3, 2005

Jury of academic degree

	Topic Role	Candidate name (Type of degree) Institution / Organization
2024	Two- and Three-dimensional Models of Radionuclide Migration from a Near-surface Repository (Thesis) Main arguer	Cristiana Das Neves Carvalhal (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2023	Nanostructuring of monocrystalline ZnO with energetic ion beams for novel optical functional materials (Thesis) Main arguer	Adéla Jagerová (PhD) Univerzita Jana Evangelisty Purkyne v Ústí nad Labem, Czech Republic
2023	Fabrication and Characterization of Single GaN Microwire Radiation Sensors: Assessment of the detection capabilities and radiation resistance Supervisor	Dirkjan Verheij (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2023	Ga2O3 field effect transistors for sensor applications Supervisor	Miguel Eduardo Dias Vítor Martins (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2023	Monte Carlo simulations of ion channelling spectra to study implantation damage in GaN with different surface orientations Supervisor	Luís Filipe Dias Vítor Martins (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2022	Micropatterning of organic materials for photosensing devices (Thesis) Main arguer	Sara Isabel Holbeche Sequeira (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2022	Irradiation of CIGS solar cells for space applications: study of tolerance and damage recovery strategies (Thesis) Main arguer	João Pedro Frazão Gomes (Master) Universidade de Aveiro, Portugal
2022	Optical centres modification in diamond: Eu3+ implantation and laser irradiation (Thesis) Main arguer	Gabriel Santiago Marques (Master) Universidade de Aveiro, Portugal
2022	Testing the radiation resistance of CIGS solar cells for space applications Supervisor	João Miguel Pereira Gaspar (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2021	Combining RBS/Channeling, X-ray diffraction and atomic-scale modelling to study irradiation-induced defects and microstructural changes (Thesis) Main arguer	Xin Jin (PhD) Université de Limoges, France
2021	Group-III nitrides response to strongly ionising radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN Supervisor	Miguel Pereira Carvalho Alves de Sequeira (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2021	Cu(In,Ga)Se2 solar cells: the impact of metastability activated by post-growth annealing (Thesis) Main arguer	Diogo Xavier da Cruz Amaral (Master) Universidade de Aveiro, Portugal
2021	Group-III nitrides response to strongly ionising radiation: Combining simulation and experiment to understand the effects of Swift Heavy Ions in GaN Supervisor	Miguel Pereira Carvalho Alves de Sequeira (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2020	Spectroscopic studies of physical properties of crystalline silicon nanoparticle systems (Thesis) Main arguer	Bruno Teixeira de Poças Falcão (PhD) Universidade de Aveiro, Portugal
2020	Emission Channeling Lattice Location Studies in Semiconductors using Highly Pixellated Timepix Detectors (Thesis) Main arguer	Eric David Bosne (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2020	Architectures based on Ga2O3 micro- and nanowires with applications in photonics (Thesis) Main arguer	Manuel Alonso Orts (PhD) Universidad Complutense de Madrid, Spain
2019	Ion implantation in AlxGa1-xN alloys and GaN nanostructures Supervisor	Djibril Nd. Faye (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2019	Material and process engineering for cost-effective silicon technologies Thesis Member	Zhengjun Liu (PhD) Aalto-yliopisto, Finland
2019	Semiconductor Triplet Sensitizer for Triplet Fusion Upconversion (Thesis) Main arguer	Frederik Eistrup (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2019	PV plant performance data analysis and modelling Supervisor	Francesca Martin (Master)
2018	Lattice location of impurities in Silicon Carbide (Thesis) Main arguer	Ângelo Rafael Granadeiro Costa (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2018	Optical and temporal carrier dynamics investigations of III- nitrides for semiconductor lighting (Thesis) Main arguer	Idris A. Ajia (PhD) King Abdullah University of Science and Technology, Saudi Arabia
2018	Micro y nanoestructuras de óxido de estaño y sus nanocompuestos con óxido de grafeno: síntesis, luminiscencia y aplicaciones en energía Thesis Member	Félix del Prado Hurtado (PhD) Universidad Complutense de Madrid, Spain
2018	Síntese e Caracterização de 2D-MoS2 (Thesis) Main arguer	Ana Rita de Campos Pereira (Master) Universidade de Aveiro, Portugal
2018	Local probe studies in Jahn-Teller distorted manganites (Thesis) Main arguer	Ricardo César Carvalho Teixeira (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2017	Study of the influence of Al content on optical activity and lattice site location of rare earth implanted AlxGa1-xN (Thesis) Main arguer	Maria Isabel Fialho (PhD) Universidade de Lisboa Instituto Superior Técnico, Portugal
2017	Caracterização Ótica de Nanofios de AlN Implantados com Európio (Thesis) Main arguer	José Pedro de Sousa Cardoso (Master) Universidade de Aveiro, Portugal
2017	Radiation sensors based on GaN microwires Supervisor	Dirkjan Verheij (Master) Universidade de Lisboa Instituto Superior Técnico, Portugal
2017	Modificação das propriedades elétricas de MoO3 por tratamento térmico e irradiação Supervisor	Daniela Filipa Rodrigues Pereira (Master) Universidade Nova de Lisboa, Portugal
2016	Estudo da luminescência de nanopartículas de ZnGa2O4:Cr3+ produzidas por Ablação por Laser Pulsado em Meio Líquido (Thesis) Main arguer	Maria da Silva Relvas (Master) Universidade de Aveiro, Portugal
2015	ZnO and GaN nanostructures for optoelectronic applications: synthesis and characterization (Thesis) Main arguer	Joana Catarina Ferreira Rodrigues (PhD) Universidade de Aveiro, Portugal
2015	Estudios de nitruros aleados mediante técnicas de haces de electrones: imagen, difracción y espectroscopía Thesis Member	Daniel Carvalho (PhD) Universidad de Cádiz, Spain
2015	Electrical characterization and modification of low dimensional oxide semiconductors for sensor applications Supervisor	Flávia Cristina Monteiro Rocha (Master) Universidade Nova de Lisboa, Portugal
2014	Síntesis, propiedades físicas y dopado de micro- y nanoestructuras de Bi2O3 y MoO3 (Thesis) Main arguer	Maria Vila Santos (PhD) Universidad Complutense de Madrid, Spain
2014	Propiedades físicas y dopado de nanoestructuras de óxido de galio (Thesis) Main arguer	Iñaki Lopez Garcia (PhD) Universidad Complutense de Madrid, Spain
2014	Lattice location of transition metals in silicon by means of emission channeling (Thesis) Main arguer	Daniel José da Silva (PhD) Universidade do Porto, Portugal
2014	Síntesis y caracterización de micro- y nanoestructuras de ZnS:X (X=Al, Ga, In) Thesis Member	Belén Sotillo Buzarra (PhD) Universidad Complutense de Madrid, Spain
2014	Caracterização de nanocristais de SnO2 e SnO2:Eu crescidos por LAFD (Thesis) Main arguer	Ana Isabel da Costa Viegas Sena (Master) Universidade de Aveiro, Portugal
2013	Caracterização e Modificação de Heteroestruturas de Nitretos do Grupo-III Supervisor	Sérgio Nuno Magalhães (PhD) Universidade de Aveiro, Portugal
2013	Síntese e caracterização de nano emissores de YAG:Dy para LEDs (Thesis) Main arguer	Paulo Manuel Figueiras Forte (Master) Universidade de Aveiro, Portugal
2012	Croissance et caractérisations structurales e optiques d’hétérostructures de nitrures d’éléments III émettant dans l’UV (Thesis) Main arguer	Vincent Fellmann (PhD) Université de Grenoble École Doctorale de Physique, France
2012	Daniela Filipa Rodrigues Pereira (Thesis) Main arguer	Denis Jalabert (Aggregation) Université Grenoble Alpes, France
2011	Implantação de terras raras em GaN com orientação polar e não-polar Supervisor	Norberto José Sobral Catarino (Master) Universidade de Lisboa Faculdade de Ciências, Portugal
2010	Structural and compositional characterization of wide bandgap semiconductor heterostructures by ion beam analysis (Thesis) Main arguer	Andrés Redondo-Cubero (PhD) Universidad Autónoma de Madrid, Spain
2010	Crescimento e caracterização de fibras de TiO2 e nano/microcristais de ZnO (Thesis) Main arguer	Joana Catarina Ferreira Rodriques (Master) Universidade de Aveiro, Portugal
2010	Implementation of “ab initio” Perturbed Angular Correlation observables for analysis of fluctuating quadrupole interactions (Thesis) Main arguer	Marcelo Barbosa (Master) Universidade do Porto, Portugal
2008	Comportement des semiconducteurs de structure wurtzite à base d'azote sous implantation d’ions terres rares de moyenne énergie (Thesis) Main arguer	Florence Gloux (PhD) Université de Caen Normandie, France

Association member

	Society Organization name	Role
2020 - Current	União dos Físicos dos Países de Língua Portuguesa (UFPLP)	member
2019 - Current	European Physical Society (EPS)	member
2005 - Current	Portuguese Physics Society (SPF)	since 2017: Member of the committee of the Nuclear Physics section; 2019-2022 treasurer
1998 - Current	German Physics Society (DPG)	member

Committee member

	Activity description Role	Institution / Organization
2023 - Current	Member of Executive Board European Physical Society (EPS) Member
2023 - Current	Member of Executive Board European Nuclear Education Network (ENEN) Member
2023 - Current	President of the Department of Nuclear Sciences and Engineering of IST President / Vice-president	Universidade de Lisboa Instituto Superior Técnico, Portugal
2017 - Current	Member of the committee of the Nuclear Physics section of the Portuguese Physics Society Member	Portuguese Physics Society, Portugal
2021/01 - 2022/12/31	Member and secretary of the scientific council of Instituto Superior Técnico, U. Lisboa Member	Universidade de Lisboa Instituto Superior Técnico, Portugal
2021 - 2022	Representative of DECN in the “Comissão de Equivalências” of IST, commission to evaluate the requests of recognition of foreign academic degrees Member	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021 - 2022	Representative of DECN in the “Comissão Conjunta do Científico e Pedagógico para o 3º ciclo” of IST, commission to redefine the doctoral programs of IST Member	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2021 - 2022	Member of the Commission to implement the JUNO (bachelor) and SCOPE (masters) Capstone projects according to the new Teaching Model and Pedagogical Practices 2021/2022 (MEPP)	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2019 - 2022	Member of the Executive Commission of the Department of Nuclear Sciences and Engineering of IST Member	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2022	Member of the Directive Board of the Portuguese Physics Society Member	Portuguese Physics Society, Portugal
2021 - 2021	Representative of DECN in the Commission of Department Communication of IST Member	Universidade de Lisboa Instituto Superior Tecnico Campus Tecnológico e Nuclear, Portugal
2019 - 2020	Member of the Ad-Hoc.Commission “Projecto Integrador de 1º ciclo (PIC1)/Projecto Capstone 2º ciclo” of PercIST (Princípios enquadradores para a reestruturação dos cursos de 1º e 2º ciclo do Instituto Superior Técnico 2122): Interdepartamental commission of IST to implement Project based learning initiatives Member	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2020	Substitute member of the Ad-Hoc.Commission “Minors multidisciplinares/transversais ao nível do 2.º ciclo” of PercIST: Interdepartamental commission of IST to implement multidisciplinary Minors as optional specialization for all master degree courses of IST Other	Universidade de Lisboa Instituto Superior Técnico, Portugal
2019 - 2020	Member of the Working Group to establish Minors offered by the Department of Nuclear Sciences and Engineering Member	Universidade de Lisboa Instituto Superior Técnico, Portugal

Conference scientific committee

	Conference name	Conference host
2022 - Current	International Conference on Ion Beam Modification of Materials
2018 - Current	EXMATEC - Expert Evaluation and Control of Compound Semiconductor Materials and Technologies
2018 - Current	Física 2018/2020/2022 (Physics Conference organised by the Portuguese Physics Society)
2024 - 2024	CMD31-General Conference of the Condensed Matter Division of the EPS, Braga, Portugal
2021 - 2021	3rd Condensed Matter Physics National Conference, Lisboa, Portugal	Portuguese Physical Society
2017 - 2017	20th International Conference on Surface Modification of Materials by Ion Beams	Lisbon, Portugal
2015 - 2015	28th International Conference on Defects in Semiconductors	Aalto University, Finland
2015 - 2015	XIII Iberian Joint Meeting on Atomic and Molecular Physics (IBER2015)	University of Aveiro, Portugal
2012 - 2015	"Oxide-based Materials and Devices" conferences, editions III (2012), IV (2013), V (2014) and VI (2015),	SPIE OPTO, San Francisco, USA.

Consulting

	Activity description	Institution / Organization
2019 - 2022	Member of the Advisory Editorial Board of Nuclear Inst. and Methods in Physics Research, B

Course / Discipline taught

	Academic session	Institution / Organization
2018 - Current	Advanced Characterization of Functional Materials	Instituto Superior Técnico Departamento de Física, Portugal
2018 - Current	Photovoltaic Solar Energy	Instituto Superior Técnico Departamento de Física, Portugal
2018 - Current	Physics and Technology of Semiconductors	Instituto Superior Técnico Departamento de Física, Portugal
2014 - 2021	Materials Science for Nuclear Technologies	Instituto Superior Técnico Departamento de Física, Portugal
2014 - 2018	Electromagnetism and Optics	Instituto Superior Técnico Departamento de Física, Portugal
2012 - 2017	Mechanics and Waves	Instituto Superior Técnico Departamento de Física, Portugal

Evaluation committee

	Activity description Role	Institution / Organization	Funding entity
2021 - Current	Member of the Selection Panel in charge of allocating beam time to the proposals submitted to the iPAC (Interdisciplinary Program Advisory Committee) of GANIL (Grand Accélérateur National d'Ions Lourds) Evaluator
2020 - Current	Reviewer for book proposal of IOP eBooks	IOP Publishing Ltd, United Kingdom
2019 - Current	Member of the EMIR&A Scientific committee	French National network of accelerators for irradiation and analysis of molecules and materials , France
2014 - Current	Member of the User Selection Panel at the Ion Beam Centre, Helmholtz-Zentrum Dresden-Rossendorf, Germany. Evaluator	Helmholtz-Zentrum Dresden-Rossendorf, Germany
2012 - Current	Evaluator of research projects of several funding agencies: Agence Nationale de la Recherche (ANR), France; National Science Centre, Poland; National Research Foundation, South Africa; National Science Foundation (NSF), USA; German Academic Exchange Service DAAD; Marsden Fund Council, New Zealand; Scientific Counsel of Latvia		Agence nationale de la recherche Deutscher Akademischer Austauschdienst Dienst National Science Centre Poland National Research Foundation National Science Foundation Marsden Fund Council Scientific Counsel of Latvia
2011 - Current	Member of the Panel of Reviewers of beamtime proposal at Centro de Micro-Análisis de Materiales, Madrid, Spain Evaluator	Universidad Autónoma de Madrid, Spain
2019 - 2022	Member of the ISOLDE and Neutron Time-of-Flight Experiments Committee - INTC - CERN Evaluator	European Organization for Nuclear Research, Switzerland

Mentoring / Tutoring

	Topic	Student name
2020 - 2022	Highly sensitive organic photosensor for advanced wireless light communication	Sara Sequeira
2013 - 2017	Study of the influence of Al content on optical activity and lattice site location of rare earth implanted AlxGa1-xN	Maria Isabel Fialho

Distinctions

Award

2020	Scientific Award Universidade de Lisboa / Caixa Geral de Depósitos in the area of Physics and Materials Science Caixa Geral de Depositos, Portugal Universidade de Lisboa, Portugal

Title

2020	Docente Excelente - 2018/2019 Universidade de Lisboa Instituto Superior Técnico, Portugal
2016	Visiting Professor University of Strathclyde Department of Department of Physics, United Kingdom
2014	Visiting Professor University of Strathclyde Department of Department of Physics, United Kingdom